unisonic technologies co., ltd 13003de preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r223-013.b silicon triple diffusion npn bipolar transistors ? description the utc 13003de is a silicon npn power switching transistor; it uses utc?s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. the utc 13003de is suitable for electronic ballasts and the general power switch circuit, etc. ? features * high collector-base breakdown voltage * high reliability * low reverse leakage current ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13003del-x-t60-k 13003deg-x-t60-k to-126 b c e bulk 13003del-x-t92-b 13003deg-x-t92-b to-92 e c b tape box 13003del-x-t92-k 13003deg-x-t92-k to-92 e c b bulk note: pin assignment: b: base c: collector e: emitter (1) b: bluk, k: bulk (2) t60: to-126, t92: to-92 (3) x: refer to classification of h fe (4) l: lead free, g: halogen free 13003del -x -t60 -k (1)packing type (2)package type (3)rank (4)lead free
13003de preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r223-013.b ? marking information package marking to-126 to-92
13003de preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r223-013.b ? absolute maximum ratings (t a =25 c, unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v continuous collector current i c 1.3 a power dissipation p d 0.8 w junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal data parameter symbol rating unit junction to ambient ja 156 c/w ? electrical characteristics (t a =25 c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =0.1ma 600 v collector-emitter breakdown voltage bv ceo i c =1ma 400 v emitter-base breakdown voltage bv ebo i e =0.1ma 9 v collector cut-off current i cbo v cb =600v, i e =0 0.1 ma collector-emitter cut-off current i ceo v ce =400v, i b =0 0.1 ma emitter-base cut-off current i ebo v eb =9v, i c =0 0.1 ma dc current gain (note 1) h fe i c =0.2a, v ce =5.0v 15 30 low current and high current h fe2 h fe1 ratio h fe1 / h fe2 h fe1 : v ce =5v, i c =5ma 0.75 0.9 h fe2 : v ce =5v, i c =0.2a collector-emitter saturati on voltage (note) v ce ( sat ) i c =0.5a, i b =0.1a 0.22 0.8 v base-emitter saturation voltage (note) v be ( sat ) i c =0.5a, i b =0.1a 1 1.5 v storage time t s ui9600, i c =0.1a 2 4 s rise time t r 1 s fall time t f 1 s transition frequency f t i c =0.2a, v ce =10v, f=1mhz 5 mhz diode forward voltage v f i f =1a 1.5 v note: pulse test, pulse width tp 300s, duty cycle 2% ? classification of h fe rank a b c range 15 ~ 20 20 ~ 25 25 ~ 30
13003de preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r223-013.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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